NXP Semiconductors
PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage suppression
8. Application information
PESD5V0S1UJ and PESD12VS1UJ are designed for the protection of one unidirectional
data or signal line from the damage caused by ESD and transient overvoltage.
The devices may be used on lines where the signal polarities are either positive or
negative with respect to ground.
The PESD5V0S1UJ provides a surge capability of 890 W and the PESD12VS1UJ
provides a surge capability of 600 W per line for an 8/20 μ s waveform.
line to be protected
(positive signal polarity)
DUT
GND
line to be protected
(negative signal polarity)
DUT
GND
unidirectional protection of one line
006aab251
Fig 9.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESD5V0S1UJ_PESD12VS1UJ_1
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 3 June 2009
9 of 14
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相关代理商/技术参数
PESD5V0S1UJ115 制造商:NXP Semiconductors 功能描述:
PESD5V0S1UL 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:ESD protection diodes in a SOD882 package
PESD5V0S1UL T/R 功能描述:TVS 二极管 - 瞬态电压抑制器 SNGLE UNI ESD DIODES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD5V0S1UL,315 功能描述:TVS 二极管 - 瞬态电压抑制器 SNGLE UNI ESD DIODES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD5V0S1UL315 制造商:NXP Semiconductors 功能描述:DIODE ESD PROTECTION UNI SOD-882
PESD5V0S1ULD 制造商:NXP Semiconductors 功能描述:DIODE UNIDIR ESD 5V SOD882D 制造商:NXP Semiconductors 功能描述:DIODE, UNIDIR, ESD, 5V, SOD882D
PESD5V0S1ULD,315 功能描述:ESD 抑制器 7.2 V 200 pF RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C
PESD5V0S1USF,315 功能描述:DIODE ESD PROTECTION SOD962 RoHS:是 类别:未定义的类别 >> 其它 系列:* 标准包装:1 系列:* 其它名称:MS305720A